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Navitas Semiconductor Corporation Drives Forward with GaN, Sponsoring Powerup Expo 2022

2022-06-14 20:21:00

Navitas Semiconductor Corporation will highlight how record shipments and high quality in the fast and ultra-fast mobile charging market are the foundation for high-power, high-reliability markets at the forthcoming PowerUP EXPO 2022 virtual conference and exhibition (28(th) -- 30(th) June). Gallium nitride (GaN) is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power, 40% energy savings and 3x faster charging in half the size and weight. Navitas' GaNFast power ICs integrate GaN power and drive plus sensing, protection and control to deliver simple, small, fast and efficient power conversion performance, in diverse applications from 20 W fast chargers and IoT devices to 22 kW EV on- board chargers.

Navitas Semiconductor Corporation Presents at TSMC North America Technology Symposium, Jun-16-2022

2022-06-08 20:23:00

Navitas Semiconductor Corporation Presents at TSMC North America Technology Symposium, Jun-16-2022 . Venue: Santa Clara Convention Center, 5001 Great America Parkway, Santa Clara, California, United States.

JPMorgan Chase & Co., JP Morgan Chase Silicon Carbide (SiC) and Gallium Nitride (GaN) Week, Jun 07, 2022

2022-05-31 20:23:00

JPMorgan Chase & Co., JP Morgan Chase Silicon Carbide (SiC) and Gallium Nitride (GaN) Week, Jun 07, 2022.

Credit Suisse Group AG, Credit Suisse: Gallium Nitride (GaN), Jun 13, 2022

2022-05-31 20:23:00

Credit Suisse Group AG, Credit Suisse: Gallium Nitride (GaN), Jun 13, 2022.

Navitas Semiconductor Corporation Presents at 19th Annual Craig-Hallum Institutional Investor Conference, Jun-01-2022 12:00 PM

2022-05-31 20:23:00

Navitas Semiconductor Corporation Presents at 19th Annual Craig-Hallum Institutional Investor Conference, Jun-01-2022 12:00 PM. Speakers: Gene Sheridan, CEO, Stephen Oliver, Vice President of Corporate Marketing & Investor Relations.

Navitas Semiconductor Corporation Presents at Bank of America 2022 Global Technology Conference, Jun-09-2022

2022-05-31 20:23:00

Navitas Semiconductor Corporation Presents at Bank of America 2022 Global Technology Conference, Jun-09-2022 . Venue: Ritz Carlton, San Francisco, California, United States. Speakers: Eugene A. Sheridan, Co-Founder, CEO, President & Chairman, Stephen Oliver, Vice President of Corporate Marketing & Investor Relations.

Navitas Semiconductor Corporation Presents at Baird 2022 Global Consumer, Technology & Services Conference, Jun-06-2022 10:50 AM

2022-05-31 20:23:00

Navitas Semiconductor Corporation Presents at Baird 2022 Global Consumer, Technology & Services Conference, Jun-06-2022 10:50 AM. Venue: InterContinental New York Barclay, 111 East 48th Street, New York City, New York, United States. Speakers: Gene Sheridan, CEO, Stephen Oliver, Vice President of Corporate Marketing & Investor Relations.

Navitas Semiconductor Corporation Presents at JP Morgan Chase Silicon Carbide (SiC) and Gallium Nitride (GaN) Week, Jun-09-2022 11:00 AM

2022-05-31 20:23:00

Navitas Semiconductor Corporation Presents at JP Morgan Chase Silicon Carbide (SiC) and Gallium Nitride (GaN) Week, Jun-09-2022 11:00 AM. Speakers: Dan Kinzer, COO/CTO and co-founder.

Navitas Semiconductor Corporation Presents at Stifel 2022 Cross Sector Insight Conference, Jun-07-2022 04:10 PM

2022-05-31 20:23:00

Navitas Semiconductor Corporation Presents at Stifel 2022 Cross Sector Insight Conference, Jun-07-2022 04:10 PM. Venue: The InterContinental Boston Hotel, Boston, Massachusetts, United States. Speakers: Eugene A. Sheridan, Co-Founder, CEO, President & Chairman, Stephen Oliver, Vice President of Corporate Marketing & Investor Relations.

Navitas Semiconductor Corporation Presents at Credit Suisse: Gallium Nitride (GaN), Jun-13-2022 10:00 AM

2022-05-31 20:23:00

Navitas Semiconductor Corporation Presents at Credit Suisse: Gallium Nitride (GaN), Jun-13-2022 10:00 AM. Speakers: Eugene A. Sheridan, Co-Founder, CEO, President & Chairman.

Navitas Semiconductor Announces Appointment of Ron Shelton as Senior VP and Treasurer

2022-05-26 20:41:00

Navitas Semiconductor announced the appointment of Ron Shelton as Senior VP, CFO and Treasurer. In parallel, interim CFO, Todd Glickman, will continue in his integral role as SVP of Finance. Mr. Shelton was previously CFO at Adesto Technologies, a provider of application-specific semiconductors and embedded systems for Internet-of-Things (“IoT”) devices, from 2011 to 2020. Prior to that, he was CFO at GigOptix, Cirrus Logic and other successful semiconductor companies. Mr. Shelton is currently a member of the board of directors, and an officer of Parabellum Acquisition Corp. Parabellum has announced its intention to focus its search for a business combination target on companies that are actively engaged in IoT technology in various segments. Mr. Shelton has significant transactional experience and has been involved in various transactions with an aggregate value of over $2 billion, including mergers and acquisitions, IPOs, debt and equity financings, joint ventures, strategic investments, and technology licensing. Mr. Shelton has a bachelor’s degree in economics from Stanford University.

Navitas Semiconductor Announces Appointment of Ron Shelton as CFO

2022-05-26 20:41:00

Navitas Semiconductor announced the appointment of Ron Shelton as CFO. In parallel, interim CFO, Todd Glickman, will continue in his integral role as SVP of Finance. Mr. Shelton was previously CFO at Adesto Technologies, a provider of application-specific semiconductors and embedded systems for Internet-of-Things (“IoT”) devices, from 2011 to 2020. Prior to that, he was CFO at GigOptix, Cirrus Logic and other successful semiconductor companies. Mr. Shelton is currently a member of the board of directors, and an officer of Parabellum Acquisition Corp. Parabellum has announced its intention to focus its search for a business combination target on companies that are actively engaged in IoT technology in various segments. Mr. Shelton has significant transactional experience and has been involved in various transactions with an aggregate value of over $2 billion, including mergers and acquisitions, IPOs, debt and equity financings, joint ventures, strategic investments, and technology licensing. Mr. Shelton has a bachelor’s degree in economics from Stanford University.

Navitas Semiconductor Corporation Provides Earnings Guidance for the Second Quarter of 2022; Provides Earnings Guidance for the Year 2022

2022-05-12 20:15:00

Navitas Semiconductor Corporation provided earnings guidance for the second quarter of 2022. For the quarter, the company expects net revenues are expected to be between $8.0 and $9.0 million. Full-year 2022 net revenues are expected to double compared to 2021, as accelerated customer wins and regional expansion offset slightly lower-than-expected Second Quarter revenues.

Navitas GaN ICs Fast-Charge Lenovo’s 2022 Legion Gen 7 Powerhouse Gaming Laptops

2022-05-12 12:30:00

Navitas Semiconductor announced that its next- generation GaNFast™ power ICs with GaNSense™ technology have been used in Lenovo's newly-released Legion C135GaN charger, and featured on the Nasdaq Tower in Times Square, New York. Lenovo’s Legion 5 and 5 Pro Gen 7 laptops are significant gaming machines, featuring AMD Rembrandt Ryzen 9 or Intel 12th-gen Alder Lake Core CPUs, AMD Radeon Vega or NVIDIA RTX GPUs, 32 GB of DDR5 memory, 1 TB of solid-state drive, up to 16” screens with 240 Hz refresh rates, and a mighty 80 Whr battery. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon (Si) chips, and enables up to 3x more power or 3x faster charging in half the size & weight. GaNFast power ICs with GaNSense technology integrates power, drive, control, with additional autonomous-protection and loss-less current-sensing to deliver the simplest, smallest, fastest and now even-higher-power performance. The 135 W-rated GaNFast charger measures only 66 x 65 x 31 mm (133 cc) – 40% smaller than legacy chargers – so the C135 achieves a power density over 1 W/cc. The power conversion topology is a PFC stage followed by an isolating high-frequency, quasi-resonant (HFQR) flyback using Navitas’ NV6136A GaNFast power IC with GaNSense technology. This eliminates the system-current-sensing resistor, avoids a high-temperature ‘hot-spot’ and delivers an additional 10% of energy savings with increased system reliability. Peak charging-efficiency is over 92%, enabling the high power-density. The C135 adopts Lenovo's proprietary protocol to reach the full 135W rating and a 0-100% charge-time of only 65 minutes. Also equipped with universal, industry-standard protocols (USB-PD, USB-PPS and QC) at 100W and below, the C135 can also fast-charge any number of laptop, tablet, phone and audio models from Lenovo and any other manufacturer.

Navitas GaN ICs Unleash TurboPower 68W Charging with the New Motorola Edge+

2022-05-11 12:30:00

Navitas Semiconductor has announced that its GaNFast technology has been selected to charge Motorola’s motorola edge+ (2022) smartphone. The TurboPower 68W (MC-681) charger has arrived in the US as a standalone accessory to bring a fast charging experience on top of the amazing battery life of the new edge+. The new motorola edge+, with the Snapdragon® 8 Gen 1 Mobile Platform, blazing-fast 5G and WiFi 6E and 6.7” OLED screen has a powerful 4,800 mAh battery. When used with the TurboPower 68W fast charger (sold separately), can charge over 50% in just 15 minutes for a superb user-charging experience. The TurboPower 68W is a great all-in-one travel-charger option for USB-C phones, tablets, and laptops. Thanks to efficiencies from the GaNFast power IC, it is notably smaller than most adapters in its power range. At only 58 x 41 x 28 mm (66 cc), the TurboPower 68W achieves a power density of 1 W/cc at a featherweight 95 g for ultra-portability. Built-in protection from power surges, extreme heat, and other dangers ensure that the smartphone or tablet remains safe while charging. High-quality design and manufacturing enable a 2-year limited manufacturer's warranty for the new charger. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon chips. Navitas’ proprietary GaN power ICs integrate GaN power (FET) and GaN drive plus control, sensing and protection in a single SMT package. The result is easy-to-use, high-speed, high-performance ‘digital-in, power-out’ building blocks that deliver up to 3x faster charging in half the size and weight, and with up to 40% energy savings compared with earlier silicon solutions.

Navitas Semiconductor Corporation Upgrades Gan Ic Power by 50% for Ev, Solar and Data Center

2022-05-10 12:30:00

Navitas Semiconductor Corporation announced the NV6169, a new high-power 650/800 V-rated GaNFast™ power IC with GaNSense™ technology to address higher-power applications such as 400-1000 W 4K/8K TVs and displays, next-generation gaming systems, 500 W solar microinverters, 1.2 kW data-center SMPS, and up to 4 kW /5 hp motor drives. GaN is a next-generation power semiconductor technology running 20x faster than traditional silicon. Compared with traditional silicon chargers, gallium nitride chargers can achieve 3x the power or 3x faster charging with up to 40% energy savings in just half the size and weight of legacy silicon solutions. GaNFast power ICs with GaNSense technology integrates power, drive, control, with additional autonomous-protection and loss-less current-sensing to deliver the simplest, smallest, faster and now even-higher-power performance. The 45 mOhms NV6169 features a 36% reduction in on-resistance (RDS(ON)), delivering 50% more power than prior designs, in an industry-standard, low-profile, low-inductance, 8 x 8 mm PQFN package for high-efficiency, high-density power systems. The NV6169 is the highest-power-rated IC from the most-advanced, third-generation integrated GaN platform. GaNFast power ICs with GaNSense technology feature GaN-industry-first features such as loss-less current sensing and the faster short-circuit protection, with a ‘detect-to-protect’ speed of only 30 ns, 6x faster than discrete solutions. In motor-drive applications, GaN ICs deliver up to 40% energy savings vs. silicon IGBTs, eliminate 30 external components, and increase system efficiency by 8%. Unlike competing solutions, the NV6169 is rated at 650V for nominal operation plus an 800 V peak-rating for robust operation during transient events. As a truly-integrated power IC, the GaN gate is fully-protected and the whole device rated at an electrostatic-discharge (ESD) specification of 2 kV.

Navitas Semiconductor Corporation, Q1 2022 Earnings Call, May 12, 2022

2022-05-02 12:30:00

Navitas Semiconductor Corporation, Q1 2022 Earnings Call, May 12, 2022

Navitas Semiconductor Corporation to Report Q1, 2022 Results on May 12, 2022

2022-05-02 12:30:00

Navitas Semiconductor Corporation announced that they will report Q1, 2022 results After-Market on May 12, 2022

Navitas GaN IC Drives vivo’s First 8-Screen Foldable Phone

2022-04-22 12:30:00

Navitas Semiconductor Corporation announced that its next-generation GaNFast™ power ICs with GaNSense™ technology have been selected to power vivo’s newly-released, first folding-screen ‘X Fold’ in-box 80W flash charger. The vivo X Fold adopts a high-capacity 4,600 mAhr dual-battery solution charging 0-50% in a lightning-fast 17 minutes, and fully-charged to 100% in only 37 minutes. The X Fold features multiple technological innovations, with Qualcomm Snapdragon 8+, 120 Hz refresh rate, 3D ultrasonic dual-screen fingerprint access and the world's first 300,000-fold TUV reliability certification. As the first in-box GaN charger for a foldable phone, the dual-output 80W USB-C charger supports vivo’s proprietary fast-charge protocol and industry-standard USB-PD, with simultaneous fast-charging of two devices. The new 80W, folding-pin, in-box charger measures only 60 x 41 x 31 mm (76 cc), achieving a power density of over 1 W/cc and a super-lightweight 125g. The full 80W power rating is shared over the two output-ports to allow flexible, simultaneous charging of phones, tablets, audio and ultra-book laptops. GaN is a next-generation power semiconductor technology running 20 times faster than traditional silicon. Compared with traditional silicon chargers, gallium nitride chargers can achieve 3x the power or 3x faster charging with up to 40% energy savings in just half the size and weight of legacy silicon solutions. Navitas’ next-generation GaNSense technology integrates real-time, accurate and fast sensing of system parameters, including current and temperature, and achieves patent-pending, loss-less current-sensing to deliver an additional 10% energy savings. GaNSense enables a ‘detect-to-protect’ time of only 30 ns - 6x faster than discrete GaN power chips for increased system reliability. For the X Fold’s 80W fast charger, Navitas’ NV6136A GaNFast power IC with GaNSense technology is used in a high-frequency, quasi-resonant (HFQR) topology for optimal system price and performance.

CS MANTECH, International Conference on Semiconductor Manufacturing Technology 2022, May 09, 2022 through May 12, 2022

2022-04-21 12:30:00

CS MANTECH, International Conference on Semiconductor Manufacturing Technology 2022, May 09, 2022 through May 12, 2022.

Navitas Semiconductor Corporation Presents at International Conference on Semiconductor Manufacturing Technology 2022, May-09-2022 through May-12-2022

2022-04-21 12:30:00

Navitas Semiconductor Corporation Presents at International Conference on Semiconductor Manufacturing Technology 2022, May-09-2022 through May-12-2022. Presentation Date & Speakers: May-10-2022, Eugene A. Sheridan, Co-Founder, CEO, President & Chairman.

Taiwan Semiconductor Manufacturing Company Limited, TSMC North America Technology Symposium, Jun 16, 2022

2022-04-09 11:46:00

Taiwan Semiconductor Manufacturing Company Limited, TSMC North America Technology Symposium, Jun 16, 2022. Venue: Santa Clara Convention Center, 5001 Great America Parkway, Santa Clara, California, United States.

Bank of America Corporation, Bank of America 2022 Global Technology Conference, Jun 07, 2022 through Jun 09, 2022

2022-03-17 14:07:00

Bank of America Corporation, Bank of America 2022 Global Technology Conference, Jun 07, 2022 through Jun 09, 2022. Venue: Ritz Carlton, San Francisco, California, United States.

Stifel, Nicolaus & Company, Incorporated, Stifel 2022 Cross Sector Insight Conference, Jun 06, 2022 through Jun 09, 2022

2022-03-02 19:15:00

Stifel, Nicolaus & Company, Incorporated, Stifel 2022 Cross Sector Insight Conference, Jun 06, 2022 through Jun 09, 2022. Venue: The InterContinental Boston Hotel, Boston, Massachusetts, United States.

Craig-Hallum Capital Group LLC, 19th Annual Craig-Hallum Institutional Investor Conference, Jun 01, 2022

2022-02-09 13:26:00

Craig-Hallum Capital Group LLC, 19th Annual Craig-Hallum Institutional Investor Conference, Jun 01, 2022.

Navitas Semiconductor Announces Change of Independent Registered Public Accounting Firm

2022-02-02 11:17:00

On October 19, 2021, Navitas Semiconductor Corporation's Board approved the engagement of Deloitte & Touche LLP (Deloitte") as the Company's independent registered public accounting firm to audit the Company's consolidated financial statements for the year ended December 31, 2021. Deloitte served as the independent registered public accounting firm of Legacy Navitas prior to the Business Combination. Accordingly, WithumSmith +Brown, PC (Withum"), the independent registered public accounting firm of LOKB was informed on October 22, 2021 that it would be replaced by Deloitte as the Company's independent registered public accounting firm following its completion of its review of the Company's financial statements for the third quarter of 2021, which consist only of the accounts of the pre-Business Combination special purpose acquisition company, LOKB.

Robert W. Baird & Co. Incorporated, Baird 2022 Global Consumer, Technology & Services Conference, Jun 06, 2022 through Jun 08, 2022

2022-01-31 12:08:00

Robert W. Baird & Co. Incorporated, Baird 2022 Global Consumer, Technology & Services Conference, Jun 06, 2022 through Jun 08, 2022. Venue: InterContinental New York Barclay, 111 East 48th Street, New York City, New York, United States.

Navitas Semiconductor Corporation Opens World's First Gan Ic Design Center Dedicated to Electric Vehicles (Ev)

2022-01-04 21:30:00

Navitas Semiconductor Corporation announced the opening of a new electric vehicle (EV) Design Center, further expanding into higher-power GaN markets. GaN-based on-board chargers (OBCs) are estimated to charge 3x faster with up to 70% energy savings compared to legacy silicon solutions. GaN OBCs, DC-DC converters and traction inverters are estimated to extend EV range or reduce battery costs by 5%, and to accelerate adoption of EVs worldwide by 3 years,. An EV-upgrade to GaN is estimated to reduce road-sector CO2 emissions by 20%/year by 2050, the target of the Paris Accord.

Navitas Semiconductor Upgrades Its GaNFast power ICs with GaNSense technology

2021-12-23 13:30:00

Navitas Semiconductor announced that its GaNFast power ICs with GaNSense technology have been upgraded to increase efficiency, power density, and access additional fast-charger markets GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power, 40% energy savings and 3x faster charging in half the size and weight. GaNFast power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. Over 30 million GaNFast power ICs have been shipped with zero reported field failures. The voltage rating of NV613x and NV615x GaNFast power ICs with GaNSense has been upgraded from 650V to 700V for continuous operation, and is rated at 800V for transient conditions. Increased voltage-rating enables more-efficient power transformer circuit designs, and higher capabilities for areas of the world with unreliable, widely-varying power grids with extreme voltage spikes. Autonomous system-level monitoring and reaction ensures 'detect and protect' within 30 ns – 10x faster than for discrete implementations. Updated datasheets and reliability reports are available immediately to customers and design partners under NDA.

Navitas Semiconductor Corporation(NasdaqGM:NVTS) added to S&P TMI Index

2021-12-20 00:00:00

Navitas Semiconductor Corporation(NasdaqGM:NVTS) added to S&P TMI Index

Navitas Semiconductor Announced That Its GaNFast Power ICs Were Selected by Dell to Fast Charge Their Premium Latitude 9000-Series Laptops

2021-12-17 13:30:00

Navitas Semiconductor announced that its GaNFast power ICs were selected by Dell to fast charge their premium Latitude 9000-series laptops. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power, 40% energy savings and 3x faster charging in half the size and weight. Navitas' GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 130 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs. The new Dell 60W fast charger is an 'in-box' optional upgrade from a legacy silicon-based charger, shipping now. Measuring only 66 x 55 x 22 mm (94 cc) and a lightweight 175 g, the new GaNFast charger is 50% smaller and 25% lighter than the previous silicon-based generation. GaN power ICs have 4x-10x lower CO2 footprint than legacy silicon chips, and Navitas estimates that the GaNFast power ICs allow Dell to reduce the total CO2 footprint (manufacturing, shipment and use) of their charger by almost 30%.

Navitas Announces First-Time Availability of GaN power ICs for Data Center, Solar and Electric Vehicle Customers

2021-12-15 21:15:00

Navitas Semiconductor announced that high-power GaN power IC samples are now available for the first time to data center, solar and electric vehicle (EV) customers worldwide. Navitas GaNFast™ ICs were first introduced to mobile customers three years ago and have become a mainstream, disruptive force in those markets, enabling unprecedented high-efficiency and ultra-fast charging of mobile devices with ultra-lightweight and miniaturized form factors. Now, for the first time, this break-through GaN power IC technology - the only GaN semiconductor platform to monolithically integrate drive, control, protection and power - is available to applications that operate in the 2kW to 20kW power range, which includes data centers, solar inverters and electric vehicle power electronics. This development is foundational in the upgrade from legacy silicon to next-generation GaN semiconductors to "Electrify Our World" and transition from fossil fuels to clean electric applications, and impact up to 2.6Gtons/year of CO2 emissions by 2050. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power, 40% energy savings and 3x faster charging in half the size and weight. Navitas' GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. The new products are optimized for each of the high-power markets, with feature, function and power upgrades to become true GaNFast application-specific integrated circuits.

Navitas Opens New Design Center Focused on Enabling GaN-based Data-Centers

2021-12-08 21:05:00

Navitas Semiconductor Corporation announced its expansion into higher-power markets with the opening of a new Design Center dedicated to bringing next-generation GaN power ICs and associated high-efficiency, high-power-density systems to enable data centers around the world to upgrade from silicon to GaN, thereby significantly improving energy savings, reducing electricity costs and cutting CO2 emissions. The new Design Center, based in Hangzhou, China, hosts a highly-experienced team of world-class power system designers with comprehensive capabilities across electrical, thermal and mechanical design, software development, and complete simulation and prototyping capabilities. Data center power customers will be supported worldwide by the new team, from concept to prototype, through to full qualification and mass production. The Design Center will develop schematics, layouts, and firmware for full-function, productizable data center power supplies. Innovative solutions for the highest power density and highest efficiency will bring the value of GaN into mainstream data centers. Additionally, there will be multiple partnerships created for magnetics, thermal substrates, and other materials to assist customers to optimize their power supply designs.

Navitas Semiconductor Corporation has closed its Shelf Registration dated November 24, 2021 in the amount of $1.591441 billion.

2021-12-06 00:00:00

Navitas Semiconductor Corporation has closed its Shelf Registration dated November 24, 2021 in the amount of $1.591441 billion. Security Name: Class A Common Stock Securities Offered: 87,007,757 Security Name: Warrants Securities Offered: 4,741,667

Navitas Semiconductor Corporation has filed a Shelf Registration in the amount of $1.591441 billion.

2021-11-24 00:00:00

Navitas Semiconductor Corporation has filed a Shelf Registration in the amount of $1.591441 billion. Security Name: Class A Common Stock Securities Offered: 87,007,757 Security Name: Warrants Securities Offered: 4,741,667

Navitas Semiconductor Corporation and Anker Sign Strategic Partnership Deal for Next-Gen Mobile Fast Chargers

2021-11-17 21:05:00

Navitas Semiconductor announced the signing of a new strategic partnership. Gallium nitride (GaN) devices power semiconductor technology, operating 20x faster than traditional silicon chips, and can achieve up to 3x more power or 3x faster charging in half the size and weight. Navitas' GaNFast™ power ICs integrate GaN power, GaN drive, protection and control and are designed to be easy-to-use, 'digital-in, power-out' circuit building blocks. Anker and Navitas have an established relationship, starting in 2017 when Anker was one of the first companies to create next-generation, fast-charger prototypes and then qualify the breakthrough new GaN technology. The 2019 Anker PowerCore Fusion PD combination charger and portable power bank was a game-changing shift in mobile power, using Navitas GaNFast power ICs to reach new levels of efficiency and power density. The new agreement dedicates engineering teams from both Navitas and Anker to be co-located at Anker offices to develop and launch GaNFast chargers to accelerate time-to-market. The initial focus will be on next-generation mobile chargers but will expand into the high-growth energy-storage markets. The deal also provides a longer planning horizon for co-operative marketing across all media platforms and in-person events, such as the Consumer Electronics Show (CES), in Las Vegas.

Navitas Semiconductor Corporation Announces Board Changes

2021-11-15 21:04:00

Navitas Semiconductor Corporation announced that effective upon the Closing, John P. Amboian, Andrea Tarbox, Adam Fishman, Jonathan Furer and Tor Braham resigned as executive officers and directors of the Company and Richard J. Hendrix and Gary K. Wunderlich, Jr. resigned as executive officers of the Company. The Board is classified into three classes, each comprising as nearly as possible one-third of the directors to serve three-year terms. As Class I directors, each of Gene Sheridan and Daniel Kinzer will serve until the Company’s 2022 annual meeting; as Class II directors, each of Brian Long, Dipender Saluja and David Moxam will serve until the Company’s 2023 annual meeting; and as Class III directors, each of Richard J. Hendrix and Gary K. Wunderlich, Jr. will serve until the Company’s 2024 annual meeting, or in each case until their respective successors are duly elected and qualified, or until their earlier resignation, removal or death.

Navitas Semiconductor Corporation Presents at Nomura Investment Forum 2021, Nov-16-2021

2021-11-15 01:06:00

Navitas Semiconductor Corporation Presents at Nomura Investment Forum 2021, Nov-16-2021 .

Navitas Semiconductor Corporation Presents at JPMorgan 9th Annual Global Technology, Media and Telecom Conference in Asia, Nov-16-2021 09:00 AM

2021-11-12 22:17:00

Navitas Semiconductor Corporation Presents at JPMorgan 9th Annual Global Technology, Media and Telecom Conference in Asia, Nov-16-2021 09:00 AM. Speakers: Eugene A. Sheridan, Co-Founder, CEO & Director.

Navitas Semiconductor Corporation Provides Earnings Guidance for the Fourth Quarter of 2021

2021-11-09 22:00:00

Navitas Semiconductor Corporation provided earnings guidance for the fourth quarter of 2021. For the fourth quarter of 2021, revenues are expected to be $7.4 million, plus or minus 5%, which represents approximately 60% growth compared to prior year.

Navitas Semiconductor Corporation Presents at 12th Annual Craig-Hallum Alpha Select Conference 2021, Nov-16-2021

2021-11-08 21:52:00

Navitas Semiconductor Corporation Presents at 12th Annual Craig-Hallum Alpha Select Conference 2021, Nov-16-2021 .

Nomura Holdings, Inc., Nomura Investment Forum 2021, Nov 16, 2021 through Nov 19, 2021

2021-11-08 07:59:00

Nomura Holdings, Inc., Nomura Investment Forum 2021, Nov 16, 2021 through Nov 19, 2021.

Navitas Semiconductor Introduces Third Generation GaN Power IC with GaNSense™ Technology

2021-11-05 12:30:00

Navitas Semiconductor has announced the launch of GaNFast™ power ICs with GaNSense technology. GaNSense technology integrates critical, real-time, autonomous sensing and protection circuits which further improves Navitas' reliability and robustness, while increasing the energy savings and fast-charging benefits of Navitas' GaN IC technology. Gallium nitride (GaN) is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging in half the size and weight. Navitas' GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. GaNSense technology integrates real-time, accurate and fast sensing of system parameters including current and temperature. This technology enables a patent-pending loss-less current-sensing capability, which improves energy savings by up to an additional 10% compared to prior generations, as well as further reducing external component count and shrinking system footprints. In addition, if the GaN IC identifies a potentially dangerous system condition, the IC is designed to transition rapidly to a cycle-by-cycle sleep-state, protecting both the device and the surrounding system. GaNSense also integrates an autonomous standby-power feature which automatically reduces standby power consumption when the GaN IC is in idle-mode, helping to further reduce power consumptions, which is especially important to the growing list of customers aggressively pursuing their own environmental initiatives. With the industry's tightest current-measurement accuracy and GaNFast response time, GaNSense technology means reducing dangerous over-current spikes by 50% and reducing time in the 'danger zone' by 50% compared to previous best-in-class solutions. GaNFast monolithic integration delivers dependable, glitch-free operation with no 'ringing', for improved system reliability. The new family of GaN power ICs with GaNSense technology spans 10 products, which all have the core, critical GaNFast integration of GaN power, GaN drive, control and protection. All are rated at 650V/800V with 2kV ESD protection, and RDS(ON) ranging from 120 to 450 mOhms in 5x6 and 6x8 mm PQFN packaging… with the GaNSense protection circuits and loss-less current-sensing. This family of 3rd generation GaN ICs is optimized for modern power conversion topologies including high-frequency quasi-resonant (HFQR) flyback, active-clamp flyback (ACF) and PFC boost, which are popular to deliver the fastest, most efficient and smallest chargers and adapters within the mobile and consumer markets. Target markets include fast-chargers for smartphones and laptops, with an estimated GaN potential of $2B/year, and another $2B/year consumer market including all-in-one PCs, TVs and home networking and automation. GaNSense technology is already used in Lenovo's YOGA 65W laptop charger. To date, over 30 million GaNFast power ICs have shipped, achieving over 116 billion device hours in the field – with zero reported GaN field failures. Each GaNFast power IC shipped has a 4-10x reduced carbon footprint and saves 4 kg of CO2 compared to legacy silicon chips. GaNFast power ICs with GaNSense technology will be showcased at the following events: 8 November: WiPDA 2021 (virtual) by Dan Kinzer, Navitas COO /CTO and co-founder; 11 November: CPSSC 2021 (Shanghai) by Dr. Xiucheng Huang, Sr. Director, Applications; and 18 November: PSMA Power Technology Roadmap (virtual) by Dan Kinzer. GaNFast power ICs with GaNSense technology are in mass production with immediate availability. Full technical details of the new GaNSense technology, including datasheets, qualification data, application notes and samples are available to customer partners under NDA.

Navitas Semiconductor Corporation Presents at Baird Global Industrial Conference 2021, Nov-11-2021

2021-11-04 12:30:00

Navitas Semiconductor Corporation Presents at Baird Global Industrial Conference 2021, Nov-11-2021 . Venue: Four Seasons Hotel, Chicago, Illinois, United States.

Navitas Semiconductor Corporation, Q3 2021 Earnings Call, Nov 09, 2021

2021-10-26 12:30:00

Navitas Semiconductor Corporation, Q3 2021 Earnings Call, Nov 09, 2021

Navitas Semiconductor Corporation to Report Q3, 2021 Results on Nov 09, 2021

2021-10-26 12:30:00

Navitas Semiconductor Corporation announced that they will report Q3, 2021 results After-Market on Nov 09, 2021

China Renaissance Securities (Hong Kong) Limited, China Renaissance Investor Conference, Oct 27, 2021 through Oct 29, 2021

2021-10-25 20:15:00

China Renaissance Securities (Hong Kong) Limited, China Renaissance Investor Conference, Oct 27, 2021 through Oct 29, 2021.

Navitas Semiconductor Corporation Presents at China Renaissance Investor Conference, Oct-27-2021

2021-10-25 20:15:00

Navitas Semiconductor Corporation Presents at China Renaissance Investor Conference, Oct-27-2021 . Speakers: Eugene Sheridan, Co-Founder, CEO & Director, Stephen Oliver, Vice President of Corporate Marketing & Investor Relations, Todd H. Glickman, Senior Vice President of Finance.

Navitas Semiconductor Corporation(NasdaqGM:NVTS) added to NASDAQ Composite Index

2021-10-21 00:00:00

Navitas Semiconductor Corporation has been added to NASDAQ Composite Index.

Navitas Semiconductor, Inc. completed the acquisition of Live Oak Acquisition Corp. II (NYSE:LOKB) from a group of sellers in a reverse merger transaction.

2021-10-19 00:00:00

Navitas Semiconductor, Inc. entered into a non-binding letter of intent to acquire Live Oak Acquisition Corp. II (NYSE:LOKB) from a group of sellers in a reverse merger transaction on February 26, 2021. Navitas Semiconductor, Inc. entered into definitive agreement to acquire Live Oak Acquisition Corp. II (NYSE:LOKB) from a group of sellers in a reverse merger transaction for $950 million on May 6, 2021. The transaction, which values the combined entity at a pro forma equity value of $1.4 billion, will result in Navitas becoming a publicly traded company on a national exchange under anew ticker symbol. The transaction is anticipated to deliver up to $398 million of gross proceeds to the combined company, assuming minimal redemptions by Live Oak II's public stockholders. This includes an oversubscribed and upsized $145 million private placement of Class A common stock in Live Oak II at $10.00 per share (the "PIPE"), from a diversified group of top-tier institutional investors. On August 17, 2021, Live Oak II entered into a subscription agreement with an affiliate of Atlantic Bridge, an existing investor in Navitas for an additional $10 million of Class A common stock to be issued in the PIPE. Proceeds of the transaction will be used to fund Navitas' future growth initiatives and as of August 17, 2021 this was increased to $155mm and now, Live Oak II has entered into subscription agreements with new investors for an additional $18mm of Class A common stock, on the same terms as the existing PIPE investors, bringing the total to $173mm.Existing Navitas shareholders will roll 100% of their equity into the combined company, demonstrating their conviction of Navitas' continued growth trajectory. Assuming that no shares of Class A Common Stock are redeemed from LOKB’s public stockholders, Navitas shareholder will own 66.8%, Live Oak shareholder will own 17.8%, Live Oak sponsor will own 4.5% and PIPE investors will own 10.9% stake in combined company. Following the closing, the combined company will list its Class A Common Stock and public warrants on NASDAQ under the new symbols “NVTS” and “NVTSW,” respectively. Live Oak Acquisition Corp. II extends the tender offer to September 17, 2021. As of September 20, 2021, Live Oak Acquisition Corp. II extends the tender offer to October 15, 2021. Immediately after the Closing, the board of directors of the post-combination company will be divided into three separate classes, designated as the Class I directors consisting of Gene Sheridan and Daniel Kinzer; the Class II directors will be Brian Long, Dipender Saluja and David Moxam and the Class III directors will be Richard J. Hendrix and Gary K. Wunderlich. The merger is subject to the satisfaction or waiver of closing conditions including the written consent of the requisite shareholders of the Navitas and Live Oak Acquisition, all required filings under the Hart-Scott-Rodino Antitrust Improvements Act of 1976, as amended (the “HSR Act”), having been completed and any applicable waiting period having expired or been terminated, the Registration Statement having been declared effective, the shares of LOKB Class A Common Stock to be issued pursuant to the Business Combination Agreement and in connection with the consummation of the Tender Offer having been approved for listing on the NYSE, receipt of resignations from the members of the governing bodies of the Navitas and its subsidiaries except for the persons identified as continuing directors; LOKB having at least $5,000,001 of net tangible assets, sale and issuance by LOKB of LOKB Class A Common Stock in connection with the Private Placements shall have been consummated, new employment agreements with certain executives being in full force and effect, each Navitas Warrant having been terminated, exercised or amended in the manner permitted by the business combination agreement and other customary closing conditions. The Board of Directors of the Navitas and Live Oak Acquisition has unanimously approved the merger agreement. Meeting of stockholders of Live Oak is scheduled on October 12, 2021 and Board of Live Oak recommends the shareholders to vote in favor of the transaction. As of September 20, 2021, registration statement on Form S-4 has been declared effective. The Board of Directors of LOKB recommends that its shareholders vote “FOR” the Business Combination Proposal. As of October 12, 2021, Live Oak II shareholders have approved the transaction. As of October 12, 2021, the transaction is expected to close on October 19, 2021. The deal is expected to close in the third quarter of 2021. The net proceeds will be used to accelerate and fund future growth initiatives. Deutsche Bank Securities Inc. and Jefferies LLC are serving as co-financial advisors to Navitas. Jonathan Axelrad; Jeffrey C. Selman, Maura Dineen, Matthew Cole, Micheál Mulvey and John F. Maselli of DLA Piper LLP is serving as legal counsel to Navitas. Nomura Securities International, Inc. and BofA Securities are serving as financial advisors whereas Sarah K. Morgan, John Lynch, Ryan Carney and John Kupiec of Vinson & Elkins LLP is serving as legal counsel to Live Oak II. Blueshirt Capital Markets LLC is serving as an advisor to Navitas. Mark Zimkind of Continental Stock Transfer & Trust Company acted as the transfer agent to LOKB. Jefferies will be entitled to a fee of $6 million for its role as financial advisor to Navitas. BofA Securities, Inc. will be entitled to a fee of $2.5 million for its role as financial advisor to LOKB. Nomura will be entitled to a fee of $5 million for its role as financial advisor to LOKB. Morrow Sodali LLC acted as proxy solicitor for LOKB for a fee of $32,500, plus disbursements. Deloitte & Touche LLP provided opinion on financials of Navitas while CohnReznick LLP provided opinion on financials of Live Oak. Navitas Semiconductor, Inc. completed the acquisition of Live Oak Acquisition Corp. II (NYSE:LOKB) from a group of sellers in a reverse merger transaction on October 19, 2021. It is anticipated that the Resulting Issuer Shares will commence trading on the Exchange under the ticker symbols “NVTS” and “NVTSW” for its common stock and warrants respectively on October 20, 2021.

Navitas Semiconductor Corporation announced that it has received $173 million in funding

2021-10-19 00:00:00

On October 19, 2021, Navitas Semiconductor Corporation closed the transaction. The company amended the terms of the transaction. The company now raised $173,000,000 in the transaction.

Live Oak Acquisition Corp. II announced that it expects to receive $18 million in funding from Live Oak Sponsor Partners II, LLC, Navitas Semiconductor Corporation

2021-10-06 00:00:00

Live Oak Acquisition Corp. II announced that it has entered into subscription agreements with two investors for a private placement of an aggregate of 1,800,000 shares of class A common stock at a price of $10 per share for aggregate gross proceeds of $18,000,000 on October 6, 2021. The transaction will include participation from Navitas Semiconductor, Inc. and returning investor Live Oak Sponsor Partners II, LLC. The closing of the transaction will take place substantially concurrently with the closing of the business combination and is contingent upon, among other customary closing conditions, the subsequent consummation of the business combination.

Xiaomi Announces New Collaboration with Navitas Semiconductor for Release of Xiaomi Civi

2021-10-01 21:08:00

Navitas Semiconductor announced that Xiaomi has officially released its new smartphone, the Xiaomi Civi, equipped with a 55W gallium nitride (GaN) charger using Navitas' GaNFast™ power IC. In Xiaomi tests, the charger powers the Civi's 4500mAh battery from 0 to 100% in just 50 minutes. The lightweight, high-performance, full-power 55W GaN charger mirrors the thin and light features of the Civi, bringing consumers an outstanding mobile experience. The Civi is an important, contemporary model for Xiaomi, targeting the young, female consumer market. It combines fashion with innovative imaging technology and aims to channel a person's natural self-confidence. The Civi uses the Qualcomm Snapdragon 778G mobile platform, with a 6.55-inch curved OLED flexible screen with 120Hz refresh rate and Dolby Vision to deliver an accurate, dynamic visual experience. Xiaomi has created an all-glass, anti-glare back surface for a silky-smooth texture with no fingerprints. The Civi's main feature package consists of a 32-megapixel front HD camera, two front soft-lights, support for auto focus and Xiaomi's picture-enhancement technology for optimal 'selfies'. Even with such powerful, advanced technology and with a large 4500mAh battery, the Civi is a slimline 6.98mm thin, and a featherweight 166g. For such a large-capacity battery, Xiaomi chose the Navitas-enabled small and portable 55W charger, for quick charging anytime, anywhere. Gallium nitride (GaN) devices are the of power semiconductor technology, operating 20x faster than traditional silicon chips, and can achieve up to 3x more power or 3x faster charging in half the size and weight. Navitas' GaNFast power ICs integrates GaN power, GaN drive, protection and control. Xiaomi's 55W charger uses an NV6115 GaN power IC in a high-frequency quasi-resonant (HQFR) flyback converter, and by using a high-frequency planar transformer, it further reduces the size and weight of the charger.

Navitas and Compuware Partner to Redefine Best-in-Class Performance for Next-Generation Data Center Power

2021-09-28 21:02:00

Navitas Semiconductor, and Compuware, the leading brand in high-end, green-energy power supplies announced a partnership to define new benchmarks for data center power supplies. With 44% of data center costs being related to power (electricity, power conversion & cooling), an upgrade to GaN-based data centers could save over 15 TWhr or up to $1.9B/year, which represents a 6x return on investment in a year. Gallium nitride (GaN) is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon chips. Navitas' proprietary GaNFast™ power ICs integrate GaN power (FET) and GaN drive plus control and protection in a single SMT package. These GaNFast power ICs become easy-to-use, high-speed, high-performance 'digital-in, power-out' building blocks and deliver up to 3x faster charging or 3x more power in half the size and weight, and with up to 40% energy savings compared with legacy silicon chips. Typical data centers using silicon to process power achieve only 75% end-to-end efficiency from 'AC-to-processor'. A GaN-based data center is expected to reach 84%, representing a dramatic 36% increase in energy savings. Typical data centers using silicon to process power achieve only 75% end-to-end efficiency from 'AC-to-processor'. A GaN-based data center is expected to reach 84%, representing a dramatic 36% increase in energy savings. Since 2014, Compuware has introduced more 'Titanium-certified' power supplies than any other company. Over 1/3 of the highest-efficiency-grade models certified are from Compuware, and the company ships over 2,000,000 server power supplies each year, with Supermicro as a lead customer With an estimated $25 of GaN content per power supply, this represents a $50M per year opportunity.

Navitas Semiconductor and BRUSA HyPower AG Announces Development Partnership to Accelerate EV Adoption

2021-09-23 20:05:00

Navitas Semiconductor and BRUSA HyPower AG (BRUSA) announced technology development partnership to accelerate EV adoption of Navitas GaN power ICs to reduce the size and weight of power electronic components that are used for EV charging. Gallium nitride (GaN) is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power or 3x faster charging in half the size and weight. Navitas' GaNFast™ power ICs integrate GaN power and GaN drive plus protection and control to deliver simple, small, fast and efficient performance. GaN power ICs dominate flagship mobile fast chargers and are progressing into higher-power markets.

Mesh Ventures, Taiwan VIP Investor Meeting, Sep 17, 2021

2021-09-14 20:10:00

Mesh Ventures, Taiwan VIP Investor Meeting, Sep 17, 2021.

Navitas Semiconductor, Inc. Presents at Taiwan VIP Investor Meeting, Sep-17-2021 10:00 AM

2021-09-14 20:10:00

Navitas Semiconductor, Inc. Presents at Taiwan VIP Investor Meeting, Sep-17-2021 10:00 AM. Speakers: Eugene Sheridan, Co-Founder, CEO & Director, Todd H. Glickman, Senior Vice President of Finance.

JPMorgan Chase & Co., JPMorgan 9th Annual Global Technology, Media and Telecom Conference in Asia, Nov 15, 2021 through Nov 19, 2021

2021-09-08 08:52:00

JPMorgan Chase & Co., JPMorgan 9th Annual Global Technology, Media and Telecom Conference in Asia, Nov 15, 2021 through Nov 19, 2021.

Craig-Hallum Capital Group LLC, 12th Annual Craig-Hallum Alpha Select Conference 2021, Nov 16, 2021

2021-09-08 08:33:00

Craig-Hallum Capital Group LLC, 12th Annual Craig-Hallum Alpha Select Conference 2021, Nov 16, 2021.

Navitas Semiconductor, Inc. Presents at Deutsche Bank Technology Conference 2021, Sep-09-2021 11:50 AM

2021-09-04 17:31:00

Navitas Semiconductor, Inc. Presents at Deutsche Bank Technology Conference 2021, Sep-09-2021 11:50 AM. Speakers: Eugene Sheridan, Co-Founder, CEO & Director.

SEMI, SEMICON Taiwan 2021's online Power and Opto Semiconductor Forum, Sep 07, 2021 through Sep 09, 2021

2021-09-03 12:08:00

SEMI, SEMICON Taiwan 2021's online Power and Opto Semiconductor Forum, Sep 07, 2021 through Sep 09, 2021.

Navitas Semiconductor, Inc. Presents at SEMICON Taiwan 2021's online Power and Opto Semiconductor Forum, Sep-07-2021 10:50 AM

2021-09-03 12:08:00

Navitas Semiconductor, Inc. Presents at SEMICON Taiwan 2021's online Power and Opto Semiconductor Forum, Sep-07-2021 10:50 AM. Speakers: Dan M. Kinzer, Co-Founder, CTO, COO & Director.

Navitas Semiconductor Announces Launch of Upgraded SHARGE 100W GaN Charger Pro

2021-08-27 12:00:00

Navitas Semiconductor announced the launch of the upgraded SHARGE 100W GaN Charger Pro. This exciting, powerful fast charger is a huge 60% smaller than legacy silicon 4-output chargers. The next-generation design is also another 12% smaller than the 2020 GaN model, with optimized design and performance to bring consumers an even better charging experience. With 3x USB Type-C and 1x USB Type-A outputs, the GaN Pro can simultaneously fast-charge 4 mobile devices, from earbuds and smartphones up to the 16" Apple MacBook Pro using dynamic power sharing to optimize charging speeds. Gallium nitride (GaN) is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon chips. Navitas' proprietary GaN power ICs integrate GaN power (FET) and GaN drive plus control and protection in a single SMT package. These 'GaNFast®' power ICs become easy-to-use, high-speed, high-performance 'digital-in, power-out' building blocks and deliver up to 3x faster charging in half the size and weight, and with up to 40% energy savings compared with earlier silicon solutions. An estimated $13.1B electrification opportunity includes mobile fast chargers and adapters, data centers, solar energy, and EV. By exploiting the high-speed, high-efficiency performance of GaNFast technology, the 100W GaN Pro measures only 77 x 59 x 29 mm (131 cc) to achieve a power density of 0.76 W/cc at a lightweight 220 g, and retails for only 535 RMB (approx. ~$83). The 100W GaN Pro shares the same, 'industrial' design style as its predecessor, now with a bold, bright yellow and gray color scheme. The 100W SHARGE GaN Charger Pro features three USB-C ports and one USB-A port, supporting PD/QC/PPS and other common protocols. The C1 and C2 ports alone can deliver up to 100W of power, while the C3 and A1 ports alone can deliver up to 20W and 22.5W respectively. When multiple interfaces are used simultaneously, the GaN Charger Pro can provide power to different devices through dynamic power distribution. With four charging ports, users can replace four, regular silicon single-port chargers with one charger, saving bulk, weight and precious AC-outlets. The powerful SHARGE 100W GaN Charger Pro uses GaNFast power ICs in two high-speed, 'soft-switching' topologies to achieve the impressive size and weight reductions. The first is a CrCM boost power-factor correction (PFC) circuit, using Navitas NV6127 (125mO) GaN power ICs to convert rectified AC power to a stable 400V DC rail. This is followed by a high-speed, isolating, 'LLC' DC -DC stage with two NV6115 (170mO) ICs to efficiently step-down the voltage to ~20V for the USB-PD output stages. A single system-controller IC (MPS HR1211) operates both circuits. The GaNFast ICs are rated at 650/800V, and up to 2MHz switching frequency in small QFN SMT packages. Thanks to the integration of GaN FET, GaN drive, protection and control, no external drivers are needed which saves PCB space, and high-speed (switching-frequency) operation shrinks the size and cost of transformers, filters and capacitors.

Navitas Semiconductor, Inc. Presents at Jefferies 2021 Virtual Semiconductor, IT Hardware and Communications Infrastructure Summit, Aug-31-2021

2021-08-26 20:14:00

Navitas Semiconductor, Inc. Presents at Jefferies 2021 Virtual Semiconductor, IT Hardware and Communications Infrastructure Summit, Aug-31-2021 . Speakers: Mark Lipacis, Managing Director.

Navitas Semiconductor, Inc. Presents at Oppenheimer 24th Annual Technology, Internet and Communications Conference, Aug-09-2021 02:55 PM

2021-08-06 12:03:00

Navitas Semiconductor, Inc. Presents at Oppenheimer 24th Annual Technology, Internet and Communications Conference, Aug-09-2021 02:55 PM. Speakers: Eugene Sheridan, Co-Founder, CEO & Director.

Navitas Semiconductor, Inc. Presents at Canaccord Genuity 41st Annual Growth Conference, Aug-10-2021 02:00 PM

2021-08-06 12:03:00

Navitas Semiconductor, Inc. Presents at Canaccord Genuity 41st Annual Growth Conference, Aug-10-2021 02:00 PM. Speakers: Dan M. Kinzer, Co-Founder, CTO, COO & Director.

Navitas and Lenovo Partner for the fifth Time with GaNFast Charging

2021-08-05 12:00:00

Navitas Semiconductor, Inc. announced that Lenovo has launched the YOGA CC130, their fifth GaNFast charger, with dual USB type-C outputs and high power 130W capability. Either Type-C output can provide 100W for large laptops and fast-charging smartphones, with a combined 130W of dynamically-shared total power when both ports are used. Fast-charging communication protocols include USB-PD, Qualcomm QC 3.0 and USB-PPS. By exploiting the high-speed, high-efficiency performance of GaNFast technology, the dual-output CC130 measures only 71 x 71 x 30 mm (151 cc) to achieve a power density of 0.85 W/cc at a lightweight 265 g. This represents up to 40% size and 45% weight savings vs. single-port legacy silicon adapters. Gallium nitride (GaN) is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon chips. Navitas' proprietary GaN power ICs integrate GaN power (FET) and GaN drive plus control and protection in a single SMT package. These 'GaNFast' power ICs become easy-to-use, high-speed, high-performance 'digital-in, power-out' building blocks and deliver up to 3x faster charging in half the size and weight, and with up to 40% energy savings compared with earlier silicon solutions. An estimated $13.1 billion electrification opportunity includes mobile fast chargers and adapters, data centers, solar energy, and EV. The CC130 dual-port GaN adapter uses GaNFast power ICs in two high-speed, 'soft-switching' topologies to achieve the impressive size and weight reductions. The first is a CrCM boost power-factor correction (PFC) circuit, using Navitas NV6117 (120 mOhm) GaN power ICs to convert rectified AC power to a stable 400V DC rail. This is followed by a high-speed, isolating, 'LLC' DC -DC stage with two NV6115 (170 mOhm) ICs to efficiently step-down the voltage to ~20V for the USB-PD output stages. Both GaNFast ICs are rated at 650/800V, up to 2MHz switching frequency in space-saving 5 x 6 mm QFN SMT packages. Thanks to the integration of GaN FET, drive, protection and control, no external drivers are needed which saves PCB space, and high-speed (switching-frequency) operation shrinks the size and cost of transformers, filters and capacitors.

Navitas Semiconductor, Inc. Presents at CJS Securities 21st Annual Summer Investor Conference, Jul-13-2021 03:45 PM

2021-07-06 11:00:00

Navitas Semiconductor, Inc. Presents at CJS Securities 21st Annual Summer Investor Conference, Jul-13-2021 03:45 PM. Speakers: Eugene Sheridan, Co-Founder, CEO & Director, Todd H. Glickman, Vice President of Finance.

Navitas Semiconductor, Inc. - Analyst/Investor Day

2021-06-30 21:49:00

Navitas Semiconductor, Inc. - Analyst/Investor Day

Navitas Semiconductor, Inc. - Analyst/Investor Day

2021-06-30 21:49:00

Navitas Semiconductor, Inc. - Analyst/Investor Day